Quick Search:       Advanced Search
龙洋,陈少平,张华,胡利方,樊文浩,孟庆森,王文先.Mg2Si热电材料与Cu/Ni复合电极的接头界面及性能[J].稀有金属材料与工程(英文),2017,46(12):3983~3988.[longyang,chenshaoping,zhanghua,hulifang,fanwenhao,mengqingsen and wangwenxian.Interface microstructure and properties between Mg2Si thermoelectric materials and Cu/Ni combined electrode[J].Rare Metal Materials and Engineering,2017,46(12):3983~3988.]
Interface microstructure and properties between Mg2Si thermoelectric materials and Cu/Ni combined electrode
Download Pdf  View/Add Comment  Download reader
Received:September 26, 2015  Revised:December 22, 2015
DOI:
Key words: Thermoelectric materials  Mg2Si  Cu  bonding  FAPAS
Foundation item:国家自然科学基金(项目号51101111),山西省高校青年学术带头人(项目号2012-031),山西省回国留学人员科研资助项目(项目号2012-033)
Author NameAffiliation
longyang,chenshaoping,zhanghua,hulifang,fanwenhao,mengqingsen and wangwenxian  
Hits: 134
Download times: 
Abstract:
      Elements diffusion across the interface will result in poor performance during service, so it’s important to put a barrier layer between thermoelectric materials and electrode, and get them bonded perfectly as well. In this work, with copper as electrode and nickel foil as barrier layer, Cu/Ni/Mg2Si thermoelectric joint was prepared by the field-activated pressure-assisted synthesis (FAPAS) method, in which the in situ synthesis of Mg2Si and bonding between different layers were accomplished in one step. SEM, EDS and XRD were used to observe the microstructure, determine phase component and forming process of new phases, and obtain element distribution across the interface; thermal shock test and four probe method were used to evaluate the mechanical properties and electrical resistivity of the joint. The results show that the synthesized Mg2Si has high purity and stable coefficient of thermal expansion (CTE) at high temperatures. The nickel layer blocks the mutual element diffusion effectively in interface and gets bonded well with copper and the synthesized Mg2Si, respectively, accompanied by the formation of new phase, Mg2SiNi3 and Mg2Ni, in turn in the former interface. Based on good match of CTE in Cu/Ni/Mg2Si interfaces, the joint stays intact even experiencing 60 thermal shock cycles. With the increase of aging time, the thickness of interfacial diffusion layer gets wider, and the contact resistance increases subsequently, which roughly fits the linear relation with . The minimum contact resistivity of the joint is 112 μΩ?cm2 when the bonding temperature is 700℃.