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罗成志,李芳莹,潘春旭.半导体型与金属型单壁碳纳米管的“原位”选择性制备及其研究进展[J].稀有金属材料与工程(英文),2017,46(12):4012~4020.[Chengzhi Luo,Fangying Li,Chunxu Pan.“In Situ” Selective Growth of Semiconducting and Metallic SWNTs: A Review[J].Rare Metal Materials and Engineering,2017,46(12):4012~4020.]
“In Situ” Selective Growth of Semiconducting and Metallic SWNTs: A Review
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Received:June 23, 2016  Revised:December 28, 2016
Key words: Single-walled carbon nanotubes  semiconducting  metallic  in situ  selective growth
Foundation item:深圳市2014年战略性新兴产业专项资金资助项目(JCYJ20140419141154246),国家自然科学基金(11174227)
Author NameAffiliationE-mail
Chengzhi Luo School of Physics and Technology,Wuhan University luo_cz@foxmail.com 
Fangying Li School of Physics and Technology,Wuhan University  
Chunxu Pan School of Physics and Technology,Wuhan University cxpan@whu.edu.cn 
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      Single-walled carbon nanotubes (SWNTs) are the ideal candidates for making next-generation electronic circuits because of their high strength, high toughness, high thermal stability, and superior electrical conductivity . However, achieving these goals is extremely challenging because the as-grown SWNTs contains mixtures of semiconducting (s-) and metallic- (m-) SWNTs, typically inadequate for integrated circuits. How to separate these two spcies according to their electronic structure and chemical activity has attracted much recent attention. Herein, this review focuses on the “in situ” metheds and techniques for the selective growth of s- and m-SWNT. Based on the understanding of the growth mechanism of those strategies, we try to propose the general guideline on that how can we develop the optimal condition for large-scaled growth of s- and m-SWNTs.