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李瑞祥,周韦,冉广,沈强,冯琦杰,叶超,李宁.单晶6H-SiC经氦离子辐照及退火后的微观组织研究[J].稀有金属材料与工程(英文),2018,47(1):378~382.[Li Ruixiang,Zhou Wei,Ran Guang,Shen Qiang,Feng Qijie,Ye Chao and Li Ning.Microstructural Investigation of Single Crystal 6H-SiC Irradiated by He+ Ions and Annealed after Post-irradiation[J].Rare Metal Materials and Engineering,2018,47(1):378~382.]
Microstructural Investigation of Single Crystal 6H-SiC Irradiated by He+ Ions and Annealed after Post-irradiation
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Received:November 21, 2016  Revised:January 04, 2017
DOI:
Key words: 6H-SiC  Ion irradiation  Helium bubble  Annealing  Microstructure
Foundation item:中国工程物理研究院的NPL, CAEP项目资助(项目号2015AB001)
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Li Ruixiang,Zhou Wei,Ran Guang,Shen Qiang,Feng Qijie,Ye Chao and Li Ning  
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Abstract:
      The single crystal 6H-SiC was irradiated by 400 keV He+ ions with 1×1016 He+/cm2 fluence at 400°C and then annealed for 30min at 1200 and 1500°C. The microstructure was observed by using transmission electron microscopy and scanning electron microscopy. Only the damaged layer was observed and no visible helium bubbles were formed in SiC matrix after helium ion irradiation at 400 °C. However, after annealled at 1200 °C for 30 minutes, platelet-like planar bubbles were formed in the irradiated region, which were distributed mainly on the (0001) plane and less on the (1 1 -2 0) crystal plane. There were no visible size defects formed on 6H-SiC surface after helium ion irradiation. But, blisters and craters were formed after annealing at 1200 °C for 30 min and became easier with annealing temperature increase. Some cracks were generated after annealing at 1500 °C. The mechanism of microstructural evolution was also analyzed and discussed.