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尚海龙,马冰洋,李荣斌,李戈扬.Al-TiB2纳米晶薄膜中的反Hall-Petch效应[J].稀有金属材料与工程(英文),2019,47(3):835~840.[Shang Hailong,Ma Bingyang,Li Rongbin and Li Geyang.The Experiment Confirmation of the Inverse Hall-Petch Effect in Al-TiB2 Nanocrytalline Films[J].Rare Metal Materials and Engineering,2019,47(3):835~840.]
The Experiment Confirmation of the Inverse Hall-Petch Effect in Al-TiB2 Nanocrytalline Films
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Received:August 09, 2017  Revised:January 17, 2019
DOI:
Key words: Al-TiB2 nanocrystals  inverse Hall-Petch effect  multilayer films  hardness
Foundation item:国家自然科学基金资助(项目号:51401120, 51671125)
Author NameAffiliation
Shang Hailong,Ma Bingyang,Li Rongbin and Li Geyang  
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Abstract:
      The effect of grain size in nanocrystalline alloys is difficult to reveal experimentally because challenges of controlling a number of other microstructure factors. This paper designed and prepared a series of multilayered films with Al-TiB2 crystalline layers of different thickness but with amorphous layers of identical thickness. In these multilayered films, the heights of columnar crystals in crystalline layers were controlled from 8 to 128nm and their diameters kept at ~15 nm, independent of their heights. This design achieved the control of grain size, independent from other microstructure factors. The analysis of mechanical properties of these multilayered films showed that the inverse Hall-Petch phenomenon also exists in Al-TiB2 nanocrystalline alloys , as nanorystalline pure Al. The critical grain sizes of deviation from the Hall-Petch relationship and the inverse Hall-Petch phenomenon are approximately 32 nm and 8 nm respectively. These critical grain sizes are similar to those reports in nanorystalline pure Al by molecular dynamic simulations.