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王雪文,吴朝科,高海波,翟春雪,张志勇,贺琳.Mg掺杂InxGa1-xN薄膜的磁控溅射法制备和表征[J].稀有金属材料与工程(英文),2019,48(4):1074~1078.[wangxuewen,wuzhaoke,gaohaibo,zhaichunxue,张志勇 and helin.Preparation and characterization of Mg doped InxGa1-xN thin films by magnetron sputtering[J].Rare Metal Materials and Engineering,2019,48(4):1074~1078.]
Preparation and characterization of Mg doped InxGa1-xN thin films by magnetron sputtering
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Received:November 09, 2017  Revised:December 29, 2017
Key words: InxGa1-xN thin film  magnetron sputtering  Mg doping  electrical properties  
Foundation item:国家自然科学基金项目(面上项目,重点项目,重大项目)
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wangxuewen,wuzhaoke,gaohaibo,zhaichunxue,张志勇 and helin  
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      Being considered In2O3, Ga2O3, Mg as In, Ga and Mg sources, the InxGa1-xN and Mg doped InxGa1-xN thin films were deposited on Si substrate by magnetron sputtering. The In component in the film decreases with the doping of Mg, because Mg doped suppresses the formation of In-N bond and increases the chance of Ga into the film. The EDS analysis of Mg doped InxGa1-xN film as-prepared show that 1.4 % of Mg content was successfully doped into the InxGa1-xN film. The electrical performances of In0.84Ga0.16N and Mg doped In0.1Ga0.9N thin films reveal that the type conduction of InxGa1-xN thin films is transformed from n-type to p-type conduction, and the hole concentration and mobility of Mg doped In0.1Ga0.9N thin film are found to be 2.65×1018 cm?3 and 3.9 cm2/Vs, respectively.