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叶昉,段文艳,莫然,殷小玮,张立同,成来飞.原位自生SiC纳米线掺杂SiOC陶瓷粉体的制备与介电性能[J].稀有金属材料与工程(英文),2019,48(1):39~43.[Fang Ye,Wenyan Duan,Ran Mo,Xiaowei Yin,Litong Zhang and Laifei Cheng.Silicon oxycarbide Powders doped with in situ grown SiC Nanowires: Synthesis and dielectric property[J].Rare Metal Materials and Engineering,2019,48(1):39~43.]
Silicon oxycarbide Powders doped with in situ grown SiC Nanowires: Synthesis and dielectric property
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Received:July 24, 2018  Revised:September 27, 2018
DOI:
Key words: Silicon oxycarbide  In situ grown SiC nanowires  Growth mechanism  Dielectric properties
Foundation item:国家自然科学基金项目(51602258, 51432008, 51502242, 51725205, 51332004), 陕西省自然科学基础研究计划(No. 2017JM5094)
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Fang Ye,Wenyan Duan,Ran Mo,Xiaowei Yin,Litong Zhang and Laifei Cheng  
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Abstract:
      The amorphous silicon oxycarbide powders containing in situ-grown single-crystal silicon carbide nanowires were fabricated via the pyrolysis of a polymeric precursor with ferrocene as the catalyst. The nanowires, with lengths of several micrometers and diameters of 10-100 nm, were composed of single-crystal β-SiC along the <111> growth direction and uniformly dispersed in the composite powders. The growth mechanism of silicon carbide nanowires was explored by analyzing the microstructure of the silicon carbide nanowires. The dielectric properties of the composite ceramic powders were studied, which demonstrates that silicon carbide nanowires can be used to adjust the electrical of the composite and a high nanowire content can result in a large real and imaginary part of permittivity.