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张宇龙,张维佳,马强,蒋昭毅,鲁超群,倪聪.铜铟镓铝硒(Cu(InGaAl)Se2)薄膜制备及其光学性能研究[J].稀有金属材料与工程(英文),2020,49(6):2104~2108.[Yulong Zhang,Weijia Zhang,Qiang Ma,Zhaoyi Jiang,Chaoqun Lu and Cong Ni.Fabricating Cu(In,Ga,Al)Se2 thin films and studying Ellipsometry and polarized light spectrum on the film[J].Rare Metal Materials and Engineering,2020,49(6):2104~2108.]
Fabricating Cu(In,Ga,Al)Se2 thin films and studying Ellipsometry and polarized light spectrum on the film
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Received:May 09, 2019  Revised:July 30, 2019
DOI:
Key words: copper indium gallium aluminum selenium CIGAS thin film  solvent hot method  doped elements  selenization process  ellipsometry spectral measurement
Foundation item:国家自然科学基金资助(项目号51572008)
Author NameAffiliation
Yulong Zhang,Weijia Zhang,Qiang Ma,Zhaoyi Jiang,Chaoqun Lu and Cong Ni  
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Abstract:
      In this paper, the copper indium gallium aluminum selenium Cu (InGaAl) Se2(hereinafter referred to as CIGAS) nanometer powders were prepared by the solvent thermal, and the copper indium gallium aluminum selenium CIGAS film was prepared by directly using the nanometer powders as the evaporation materials. And then the amorphous film was placed in homemade sealing flange with high purity selenium powder to selenide and anneal under vacuum, and conform to the stoichiometric ratio of selenium CIGAS copper indium gallium aluminum selenium film. The structure and composition of CIGAS thin films were determined by X-ray diffraction (XRD), Raman spectroscopy (Raman), scanning electron microscopy (STM) and energy spectrum (ED). The elliptic parameters Ψ(λ) and Δ (λ) of copper indium gallium aluminum selenium CIGAS film were measured using elliptic polarization spectral measurement technique, and then the thin film optical parameters such as refractive index n (λ), extinction coefficient k (λ), absorption coefficient and the film’s light energy gap Eg were obtained , and it was found that the doping of Al significantly increases the light energy ga Eg, and the related physical questions were analyzed too.