Quick Search:       Advanced Search
李君哲,姜如,刘海韬,黄丽华,黄文质,田浩.二氧化钌电阻涂层电阻温度特性研究[J].稀有金属材料与工程(英文),2021,50(5):1679~1684.[Li Junzhe,Jiang Ru,Liu Haitao,Huang Lihua,Huang Wenzhi and Tian Hao.The Resistance-temperature Characteristic of RuO2-based Thick Film Resistor[J].Rare Metal Materials and Engineering,2021,50(5):1679~1684.]
The Resistance-temperature Characteristic of RuO2-based Thick Film Resistor
Download Pdf  View/Add Comment  Download reader
Received:February 27, 2020  
DOI:
Key words: RuO2-based resistance film  ASf/SiO2 composite  thermal mismatch  residual stress
Foundation item:
Author NameAffiliation
Li Junzhe,Jiang Ru,Liu Haitao,Huang Lihua,Huang Wenzhi and Tian Hao  
Hits: 25
Download times: 18
Abstract:
      RuO2-based thick film resistor is widely used in thick film integrated circuits because of its good resistance stability and low temperature coefficient of resistance. In this study, the ASf/SiO2 composite and alumina ceramic were chosen as substrates, and the RuO2-based thick films were fabricated on the two substrates by screen printing. The thermal mismatch between the thick film and substrates from 25℃ to 700℃ was analyzed by using the digital image correlation method, finite element method and XRD stress measurement method, and then the resistance-temperature characteristic for thick film was investigated. The results showed that the thermal expansion coefficient of the thick film was larger than that of ASf/SiO2 composites. The thick film fabricated on ASf/SiO2 composite substrate was suffered residual tensile, which was released at highStemperature. Thus, the distance between conductive particles was reduced, leading to the decrease of potential barrier resistance. Thick film prepared on ASf/SiO2 composite substrates presented negative resistance-temperature characteristic. On the contrary, the thermal expansion coefficient of the thick film was smaller than that of alumina. The thick film fabricated on alumina substrate was suffered residual compressive stress, which was also released at highStemperature. And then, the distance between conductive particles was rose, resulting in the increase of potential barrier resistance. The thick film prepared on alumina substrate exhibited positive resistance-temperature characteristic.. Keywords: RuO2-based resistance film; ASf/SiO2 composite; thermal mismatch; residual stress