A newly Ti-doped In2O3 rotary target was used to prepare transparent conductive oxide (TCO) films for amorphous/crystalline silicon heterojunction solar cells. The changes in electrical and optical properties of TCO films were investigated based on T100 thin films deposited under various O2 content mixture and ITO reference. A columnar structure was observed and exhibited high quality on optical performance. Maximum mobility of 75.6 cm2 V?1s?1 was observed in Ti-doped In2O3 films. Compared to the ITO films, it was verified that T100 material can support enhancement of 0.26% in cell conversion efficiency based on HJT production line, mainly benefit from their excellent electrical transport properties, as well as the high transparency.