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姚丹,汪伟伟,童瑞雪.高分子辅助沉积法制备Sm x Nd1- x NiO3 外延薄膜[J].稀有金属材料与工程(英文),2021,50(5):1518~1522.[Yao Dan,Wang Weiwei and Tong Ruixue.Sm x Nd1- x NiO3 Thin-Films with Tunable Metal–Insulator Transition Grown by Polymer-Assisted Deposition[J].Rare Metal Materials and Engineering,2021,50(5):1518~1522.]
Sm x Nd1- x NiO3 Thin-Films with Tunable Metal–Insulator Transition Grown by Polymer-Assisted Deposition
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Received:April 20, 2020  
DOI:
Key words: nickelate  metal-insulator transition  epitaxial film  polymer assisted deposition
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Yao Dan,Wang Weiwei and Tong Ruixue  
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Abstract:
      The epitaxial SmxNd1-xNiO3 (x=0.5, 0.55, 0.6, SNNO) thin films with (001)-oriented single-crystal LaAlO3 substrates were fabricated by a chemical solution deposition technique, namely polymer-assisted deposition (PAD) under the ambient oxygen annealing. X-ray diffraction θ-2θ scan, rocking curve measurement, φ-scan and scanning electron microscopy were used to study the SNNO characteristics. The results reveal the good crystallinity and heteroepitaxy of these SNNO films. Temperature dependence of the resistivity indicates that all the films show a clear Mott metal-insulator transition (MIT) and the transition temperature (TMI) shifts to higher temperature with the increase of Sm content. The epitaxial Sm0.55Nd0.45NiO3 thin films exhibit MIT near room temperature. The successful growth of high quality SNNO films with room temperature transition by economic and facile PAD method shows great potential in practical application of nickelate.