As a new generation of semiconductor materials, CdMnTe material has high application value in the field of nuclear radiation detection. In this paper, Te solution vertical Bridgman method was used to grow Cd0.9Mn0.1Te: V crystal to study the optical and electrical properties and the distribution of deep-level defects of the Cd0.9Mn0.1Te: V crystal. UV-VIS-NIR spectroscopy analysis shows that the band gap in the middle and tail of the ingot is 1.602 eV and 1.598 eV. The photoluminescence spectral analysis shows that the (D0,X) peak of the crystal is sharp and the half-width is small, indicating that the defect or impurity content is low and the crystal quality is superior. The room temperature I-V test, shows that the resistivities of the middle and tail crystals are 2.85×1010 Ω?cm and 9.54×109 Ω?cm, and leakage currents 3 nA and 8.5 nA, respectively. The Hall test shows that the conductivity type of the crystal is n-type. The energy of the trap peak and the defect concentration in the Cd0.9Mn0.1Te: V crystal are studied by heat induced current spectroscopy. The values of the deep donor levels (EDD) derived from the Te2+ Cd in the middle and tail samples of the ingot are 0.90 eV and 0.812 eV, respectively. Does the deep donor level EDD make the Fermi level in the center of the forbidden band and thus to present a high resistivity.