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[Yueyue Wang,Meihua Hu,Ning Bi,Pengju Han,Xubiao Zhou and Shangsheng Li.Preparation and thermoelectric properties of B-doped p-type SiGe alloys[J].Rare Metal Materials and Engineering,2022,51(8):2942~2946.]
Preparation and thermoelectric properties of B-doped p-type SiGe alloys
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Received:July 10, 2021  Revised:August 15, 2021
Key words: thermoelectric materials  Silicon germanium alloy  Spark plasma sintering  Thermal conductivity
Foundation item:国家自然科学基金资助(52072113)
Author NameAffiliation
Yueyue Wang,Meihua Hu,Ning Bi,Pengju Han,Xubiao Zhou and Shangsheng Li  
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      As an important high-temperature thermoelectric materials, SiGe alloy has been concerned and used widely. Although the dimensionless thermoelectric merit (ZT) of n-type SiGe alloys thermoelectric material has made much great progress, the ZT of p-type SiGe alloys is still low. In this paper, p-type Si80Ge20Bx (x = 0.5, 1.0, 2.0) alloys thermoelectric materials were prepared by one-step alloying method using Si, Ge and B powders as raw materials. The composition, microstructure and thermoelectric properties of the samples were characterized and analyzed. The results show that, in-situ one-step alloying followed by spark plasma sintering can be realized and bulk materials can be obtained. With the increase of B doping content, the electrical conductivity increases significantly and the thermal conductivity decreases significantly. When the temperature is 950 K, the thermal conductivity is 1.79 W/(m K). At 1050 K, ZT reaches the maximum value of 0.899. Due to the synergistic effect of ball milling and doping, different types of defects are produced in SiGe structure matrix resulted in scattering of different wavelengths of phonons, leading to the decrease of thermal conductivity of SiGe alloy.