With the rapid development of the third-generation semiconductors SiC and GaN, traditional packaging materials such as Si-based lead-free solder cannot satisfied the requirements of high-power density and high-temperature loadings in power electronic devices any more. Nowadays, the joints packaged by Cu nanoparticle sintering technology could not only be bonded at low-temperature and serving at high-temperature, but also exhibit excellent thermal conductivity, electrical conductivity and relatively lower cost comparing to Ag nanoparticles. Thus, more and more attentions has been attracted in the field of Cu nanoparticle sintering technology using in power electronic packaging, which makes Cu nanoparticles become one of the most potential high-temperature-resistant packaging and interconnection materials. In this work, the current research progress of Cu nanoparticle sintered technology was summarized, including the fabrication of Cu nanoparticle pastes, the factors affecting the performance of sintered joints and the reliability of joints. Meanwhile, the oxidation behaviors as well as the anti-oxidation methods of Cu nanoparticle were introduced. Also, the high-temperature working reliability and failure mechanism of Cu nanoparticle sintered joints were discussed. This review was aimed at promoting the application of low-cost Cu nanoparticle sintering technology for high-performance and high-reliability power electronic packaging.