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崔真,李恩玲.氮化镓纳米铅笔与纳米塔制备及优异场发射性能研究[J].稀有金属材料与工程(英文),2018,47(1):43~46.[Zhen Cui and Enling Li.Growth and excellent field emission properties of GaN nanopencils and nanotowers[J].Rare Metal Materials and Engineering,2018,47(1):43~46.]
Growth and excellent field emission properties of GaN nanopencils and nanotowers
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Received:December 05, 2016  Revised:December 05, 2016
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Key words: GaN  nanocomposite  field emission properties  functional applications
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Zhen Cui and Enling Li  
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Abstract:
      Gallium nitride (GaN) nanopencils and nanotowers have been synthesized by chemical vapor deposition (CVD) method using the reaction of Ga2O3 and ammonia. The observed morphology of GaN nanopencils is divided into two parts: the bottom is a nanowire with large diameter; the top is a nanowire with small diameter. The observed morphology of GaN nanotowers is a layer structure. The formation mechanism of GaN nanopencils and nanotowers is a vapor-liquid-solid (VLS) mechanism. The turn on field of 2.6 V/μm is obtained for GaN nanopencils and the turn on field of 4.1 V/μm is obtained for GaN nanotowers, which are sufficient for ?eld emission ?at panel displays and cold electron sources in display devices. This growth of GaN nanopencils and nanotowers will facilitate flexible design of device architectures for nanoelectronics.