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聂祥龙,马大衍,马飞,徐可为.HOPG上ALD沉积Al2O3介电薄膜的生长行为研究[J].稀有金属材料与工程(英文),2018,47(1):64~68.[Nie Xianglong,Ma Dayan,Ma Fei,Xu Kewei.Growth behavior evolution of Al2O3 deposited on graphite by atomic layer deposition[J].Rare Metal Materials and Engineering,2018,47(1):64~68.]
Growth behavior evolution of Al2O3 deposited on graphite by atomic layer deposition
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Received:December 06, 2016  Revised:December 06, 2016
DOI:
Key words: Al2O3  HOPG  atomic layer deposition  growth behavior
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Author NameAffiliationE-mail
Nie Xianglong State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University yzdelei@163.com 
Ma Dayan State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University madayan@mail.xjtu.edu.cn 
Ma Fei 西安交通大学 金属材料强度国家重点实验室  
Xu Kewei 西安交通大学 金属材料强度国家重点实验室  
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Abstract:
      Al2O3 dielectrics were fabricated on highly ordered pyrolytic graphite (HOPG) by atomic layer deposition (ALD) and the effects of growth temperatures and number of ALD cycles on growth behaviors were studied. It is found that Al2O3 preferentially grows along the step edges which promote the formation of Al2O3 nanowires at the initial stage. Al2O3 nanowires can exist after 100 ALD cycles at 50, 150, and 200 °C, but discontinuous Al2O3 thin films rather than nanowires are evidenced at 100 °C. Moreover, the Al2O3 layers evolve into continuous thin films with increasing number of ALD cycles. It suggests the growth behavior undergoes a transition from three-dimensional mode to quasi two-dimensional mode with increasing number of ALD cycles. The rates of transition and lateral growth are dependent on growth temperatures. Raman spectra indicate that HOPG maintains undamaged and greatly reserves its original properties after the deposition of Al2O3. The results are of great significance to the fabrication of high-quality dielectric layers on graphene as well as the related devices.