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王雪文,李婷婷,苏星星,吴朝科,翟春雪,胡峰,张志勇,赵武.采用磁控溅射法在Si(100)生长InN薄膜及其禁带宽度与拉曼的测试[J].稀有金属材料与工程(英文),2018,47(1):69~74.[Xuewen Wang,Tingting Li,Xingxing Su,Zhaoke Wu,Chunxue Zhai,Feng Hu,Zhiyong Zhang,Wu Zhao.Band Gap and Raman shift of InN grown on Si (100) by radio-frequency sputtering[J].Rare Metal Materials and Engineering,2018,47(1):69~74.]
Band Gap and Raman shift of InN grown on Si (100) by radio-frequency sputtering
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Received:December 06, 2016  Revised:December 07, 2016
DOI:
Key words: thin films  optical materials  crystal growth  optical properties  X-ray diffraction  Energy
Foundation item:国家自然科学基金项目(面上项目,重点项目,重大项目)
Author NameAffiliationE-mail
Xuewen Wang School of Information Science and Technology,Northwest University,Xi''an 710127 wangxuew@nwu.edu.cn 
Tingting Li School of Information Science and Technology,Northwest University,Xi''an 710127  
Xingxing Su School of Information Science and Technology,Northwest University,Xi''an 710127  
Zhaoke Wu School of Information Science and Technology,Northwest University,Xi''an 710127  
Chunxue Zhai School of Information Science and Technology,Northwest University,Xi''an 710127  
Feng Hu School of Information Science and Technology,Northwest University,Xi''an 710127  
Zhiyong Zhang School of Information Science and Technology,Northwest University,Xi''an 710127  
Wu Zhao School of Information Science and Technology,Northwest University,Xi''an 710127  
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Abstract:
      In this paper, we have grown the InN films with high orientation and varieties typical micrographs on Si (100) substrate by radio-frequency (RF) sputtering, while Indium was used as Indium target, and Nitrogen was used as Nitrogen source. The X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) show that all the diffraction peaks are identified to be associated with the wurtzite phase of InN, with high orientation of (101), (100) and (002). The Scanning Electron Microscope (SEM) and Energy Diffraction Spectrum (EDS) reveal that the high-quality crystal films of InN with various typical microstructures could be deposited, especially the standard of the hexagon at 60 W and 0.4 Pa. We also calculate the stress of InN films in E2 (High) by Raman spectra with an excitative wave length λ= 633 nm at room temperature, the values of the stress are different due to various microstructures. The A1 (LO) peaks are lower due to the high mobility. The calculated energies are 1.07 eV, 1.13 eV and 1.32 eV. The XRD, SEM, XPS, Raman spectra, Hall and UV absorption characterizations reveal that we could grow different microstructures of thin films to adapt the various requirements of sensors and other devices.