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畅庚榕,刘明霞,马飞,付福兴,何斌锋,徐可为.Si/C多层薄膜中硅纳米晶的微结构演化[J].稀有金属材料与工程(英文),2018,47(1):59~63.[Gengrong Chang,Liu Mingxia,Ma Fei,Fu Fuxing,He Binfeng,Xu Kewei.Microstructure Evolution of Si Nanocrystals in Si/C Multilayer Films[J].Rare Metal Materials and Engineering,2018,47(1):59~63.]
Microstructure Evolution of Si Nanocrystals in Si/C Multilayer Films
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Received:February 17, 2017  Revised:February 17, 2017
DOI:
Key words: silicon  nanocrystal, Si/C  superlattice film, microstructure, raman  shift
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Author NameAffiliationE-mail
Gengrong Chang Xi''an University gr_chang@163.com 
Liu Mingxia 西安文理学院  
Ma Fei   
Fu Fuxing 西安文理学院  
He Binfeng 西安文理学院  
Xu Kewei 西安文理学院  
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Abstract:
      Si/C multilayer films deposited by radio frequency magnetron sputtering were post-annealed at 1100°C for 1 h to produce Si nanocrystals (NCs). X-ray diffraction and Raman spectroscopy were used to analyze the phase composition and atomic vibration spectrum of the multilayer structure. High-resolution transmission electron microscopy was employed to verify the existence of Si NCs and to observe their sizes and morphologies. The results reveal that the Si NCs were formed by solid-phase recrystallization of the nanometer-thick layers of amorphous Si confined between C layers. The NC shape and size could be tuned by changing the modulation ratio of the Si layer and the C layer. When the ratio shifted from 0.5 to 2, the NCs became spherical, elliptical, square, and brick-shaped. This growth mode may be conducive to the design of different Si-based photo-electronic materials...