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邹建雄,林黎蔚,焦国华,鲁远甫,刘波,许可为.铜互连微结构无籽晶RuMoC扩散阻挡层稳定性研究[J].稀有金属材料与工程(英文),2019,48(6):1809~1813.[Zou Jian Xiong,Lin Li Wei,Jiao Guo Hua,Lu Yuan Fu,Liu Bo and Xu Ke Wei.Characterization of thermal stability of RuMoC films as seedless Cu diffusion barriers in damascene structures for Cu interconnects[J].Rare Metal Materials and Engineering,2019,48(6):1809~1813.]
Characterization of thermal stability of RuMoC films as seedless Cu diffusion barriers in damascene structures for Cu interconnects
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Received:January 18, 2018  Revised:March 06, 2018
DOI:
Key words: thermal stability  damascene structures  amorphous RuMoC film  seedless diffusion barrier  
Foundation item:国家自然科学基金项目 Nos.11605116,深圳市科技计划项目 Nos.JCYJ20150925163313898 和 JCYJ20140417113130693以及深圳市工程实验室项目No.2012-1127
Author NameAffiliation
Zou Jian Xiong,Lin Li Wei,Jiao Guo Hua,Lu Yuan Fu,Liu Bo and Xu Ke Wei  
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Abstract:
      The objective of this study is to test the feasibility of RuMoC films for its application in seedless Cu diffusion barriers of damascene structure. The compatibility with IC fabrication and thermal stability of RuMoC barriers were investigated. The RuMoC barriers were amorphous at temperatures up to 500 ℃, showing great thermal stability. This is because the Ru-C bonds were well preserved at those temperatures, as revealed by XPS results, which hindered the Ru from crystallizing. A Cu plug of good quality was successfully electroplated on RuMoC barriers and filled the trench without seed layer, and the barrier effectively blocked the diffusion of Cu atom at temperatures up to 500 ℃. The results indicated a great prospect of RuMoC film as seedless Cu diffusion barrier in damascene structure for Cu interconnect.