[Yu Zhinong,Xiang Longfeng,Li Yuqiong,Xue Wei.Effects of SiO2 Buffer Layer on the Characteristics of Flexible ITO Films[J].Rare Metal Materials and Engineering,2009,38(3):443~446.]
[doi] |
| Effects of SiO2 Buffer Layer on the Characteristics of Flexible ITO Films |
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| Received:February 10, 2008 |
| DOI： |
| Key words: ion beam assisted deposition ITO film SiO2 buffer layer |
| Foundation item:北京市自然科学基金（3063022）；北京理工大学优秀青年教师资助计划（059852） |
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| Abstract: |
| The flexible ITO films were fabricated on PET substrate by Ion Beam Assisted Deposition(IBAD), and the effects of SiO2 buffer layer on the properties of ITO films were researched. The properties of ITO films were studied using X-ray diffraction (XRD), UV-VIS spectrometer, four-point probe and optical profiler. The results show that the SiO2 interlayer between ITO films and PET results in an increase of X-ray peak intensity of ITO film and a decrease of resistivity to 1.21×10-3 Ω·cm; in addition, the transmittance decreases to 85% and the surface is relatively smooth. The resistivity of the ITO films bent to some extent keeps some stability |
